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Package Marking and Ordering Information
Device Marking
FDB14AN06LA0
Device
FDB14AN06LA0_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
60
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 50V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
1
-
3
V
I D = 67A, V GS = 10V
-
0.0102 0.0116
r DS(ON)
Drain to Source On Resistance
I D = 60A, V GS = 5V
I D = 60A, V GS = 5V,
T J = 175 o C
-
-
0.0128 0.0146
0.028 0.033
?
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 5V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 5V
-
-
-
2900
270
115
24
-
-
-
31
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 1V
V DD = 30V
I D = 60A
I g = 1.0mA
-
-
-
-
3.0
12
9.1
7.9
3.9
-
-
-
nC
nC
nC
nC
Switching Characteristics (V GS = 5V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
15
276
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 30V, I D = 60A
V GS = 5V, R GS = 5.1 ?
-
-
-
-
169
24
50
-
-
-
-
109
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 60A
I SD = 30A
I SD = 60A, dI SD /dt = 100A/ μ s
I SD = 60A, dI SD /dt = 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
33
29
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 40 μ H, I AS = 48A.
?2010 Fairchild Semiconductor Corporation
FDB14AN06LA0_F085 Rev. C
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